• Àüü
  • ÀüÀÚ/Àü±â
  • Åë½Å
  • ÄÄÇ»ÅÍ
´Ý±â

»çÀÌÆ®¸Ê

Loading..

Please wait....

Çмú´ëȸ ÇÁ·Î½Ãµù

Ȩ Ȩ > ¿¬±¸¹®Çå > Çмú´ëȸ ÇÁ·Î½Ãµù > ICFICE > ICFICE 2019

ICFICE 2019

Current Result Document :

ÇѱÛÁ¦¸ñ(Korean Title) Electrical Characteristic of Monolithic 3D Inverter Consisting of JLFET with Interface Charge
¿µ¹®Á¦¸ñ(English Title) Electrical Characteristic of Monolithic 3D Inverter Consisting of JLFET with Interface Charge
ÀúÀÚ(Author) Tae-Jun Ahn   Jong Ho Lee   Young Baek Kim   Yun Seop Yu  
¿ø¹®¼ö·Ïó(Citation) VOL 11 NO. 01 PP. 0024 ~ 0026 (2019. 06)
Çѱ۳»¿ë
(Korean Abstract)
¿µ¹®³»¿ë
(English Abstract)
In this paper, we investigated the effect of interface trap charge generated by process thermal on monolithic three-dimensional (3D) inverter (M3DINV) with junctionless fieldeffect transistor (JLFET). The current-voltage characteristics of M3DINV with JLFET was simulated with TCAD simulator. Due to the interface trap charge, the current level decreased and the threshold voltage changed.
Å°¿öµå(Keyword) Monolithic 3D IC   JLFET   Interface trap charge   M3DINV  
ÆÄÀÏ÷ºÎ PDF ´Ù¿î·Îµå